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| PD- 91667C IRF7321D2 FETKY MOSFET & Schottky Diode l l l l l l TM Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET(R) Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K K D D VDSS = -30V RDS(on) = 0.062 Schottky Vf = 0.52V 2 7 3 6 4 5 T op V ie w Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Maximum -4.7 -3.8 -38 2.0 1.3 16 20 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient Maximum 62.5 Units C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ISD -2.9A, di/dt -77A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s - duty cycle 2% Surface mounted on FR-4 board, t 10sec. www.irf.com 3/17/99 IRF7321D2 MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- -1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.042 0.076 --- 7.7 --- --- --- --- 23 3.8 5.9 13 13 34 32 710 380 180 Typ. --- --- -0.78 44 42 Max. Units Conditions --- V VGS = 0V, ID = -250A 0.062 VGS = -10V, ID = -4.9A 0.098 VGS = -4.5V, ID = -3.6A --- V VDS = VGS, I D = -250A --- S VDS = -15V, I D = -4.9A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 55C 100 VGS = -20V nA -100 VGS = 20V 34 ID = -4.9A 5.7 nC VDS = -15V 8.9 VGS = -10V, See Fig. 6 19 VDD = -15V 20 ID = -1.0A ns 51 RG = 6.0 48 RD = 15, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Max. Units Conditions -2.5 A -30 -1.0 V TJ = 25C, IS = -1.7A, VGS = 0V 66 ns TJ = 25C, I F = -1.7A 63 nC di/dt = 100A/s Conditions 50% Duty Cycle. Rectangular Wave, Tc = 25C See Fig.14 Tc = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Min. Continuous Source Current(Body Diode) --- Pulsed Source Current (Body Diode) --- Body Diode Forward Voltage --- Reverse Recovery Time (Body Diode) --- Reverse Recovery Charge --- Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Schottky Diode Maximum Ratings If (av) I SM Max. Units 3.2 A 2.0 200 20 A Schottky Diode Electrical Specifications Vfm Parameter Max. Forward voltage drop Max. Units 0.57 0.77 V 0.52 0.79 0.30 mA 37 310 pF 4900 V/s Conditions If = 3.0, Tj = 25C If = 6.0, Tj = 25C If = 3.0, Tj = 125C If = 6.0, Tj = 125C . Vr = 30V Tj = 25C Tj = 125C Vr = 5Vdc ( 100kHz to 1 MHz) 25C Rated Vr Irm Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7321D2 Power Mosfet Characteristics 100 TOP VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 100 TOP -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 -3.0V -3.0V 1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 1 0.1 1 20s PULSE WIDTH TJ = 150C A 10 -V D S , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 -4.9A ID =-4.9A RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1.5 T J = 25C TJ = 150C 10 1.0 0.5 1 3.0 3.5 4.0 4.5 V D S = -10V 20s PULSE WIDTH 5.0 5.5 6.0 A 0.0 -60 -40 -20 -10V VGS =-10V 0 20 40 60 80 100 120 140 160 -V G S , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7321D2 Power Mosfet Characteristics 1400 VGS = 0V f = 1 MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd 20 SHORTED ID = -4.9A VDS =-15V -VGS , Gate-to-Source Voltage (V) A 1200 16 C, Capacitance (pF) 1000 C iss C oss 800 12 600 8 400 C rss 4 200 0 1 10 100 0 0 10 20 30 40 - V D S , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150C 10 -I D , Drain Current (A) I 100us 10 TJ = 25C 1ms 1 0.4 0.6 0.8 1.0 V G S = 0V 1.2 A 1.4 1 1 TC = 25 C TJ = 150 C Single Pulse 10 10ms 100 -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7321D2 Power Mosfet Characteristics 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient RDS (on) , Drain-to-Source On Resistance () 0.5 RDS (on) , Drain-to-Source On Resistance () 0.6 0.16 0.12 0.4 0.3 0.08 I D = -4.9A 0.2 V G S = -4.5V 0.04 0.1 V G S = -10V 0.0 0 10 20 30 A 0.00 0 3 6 9 12 15 A -I D , Drain Current (A) -V GS , Gate -to-Source Voltage (V) Fig 10. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage www.irf.com 5 IRF7321D2 Schottky Diode Characteristics 100 100 TJ = 150C 10 125C 100C Reverse Current - IR (mA) 1 75C 0.1 50C In stan ta ne o u s Forw ard C u rre n t - I F (A ) 10 0.01 25C T J = 1 50 C T J = 1 25 C T J = 2 5 C 0.001 0 10 20 30 ) Reverse Voltage - V R (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1 A llow ab le A m bient Tem pe ra ture - (C ) 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 D D D D D = 3/4 = 1/2 =1 /3 = 1/4 = 1/5 V r = 8 0 % R ated R t hJA = 6 2.5 C /W Sq uare wave DC 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Fo rw ard V o lta g e D ro p - V FM (V ) Forward Voltage Drop - VF (V) Fig. 12 - Typical Forward Voltage Drop Characteristics A Av era ge F orw ard C urrent - I F(AV ) (A ) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7321D2 SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A A1 B 5 8 E -A - 7 6 5 H 0.2 5 (.0 10 ) M AM 1 2 3 4 C D E e e1 H K e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS 0 .10 (.00 4) L 8X 6 C 8X L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking www.irf.com 7 IRF7321D2 Tape and Reel T E R M IN A L N U M B E R 1 12 .3 ( .484 ) 11 .7 ( .461 ) 8.1 ( .31 8 ) 7.9 ( .31 2 ) F E E D D IR E C T IO N N OTE S : 1 . C ON TR O LL IN G D IM E N S ION : M IL LIM E TE R. 2 . A L L D IM E N S ION S A RE S H O W N IN M IL L IM E TE R S (INC H E S ). 3 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -54 1 . 33 0.00 (12 .992 ) M AX . 14.4 0 ( .5 66 ) 12.4 0 ( .4 88 ) NOTES : 1. C O N T R O LLIN G D IM E N S IO N : M ILL IM E T E R . 2. O U T LIN E C O N F O R M S T O E IA -481 & E IA -541. 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